#Just yuri mod alpha full#
The inset shows I − V curves based on the full P ( E ) calculation as functions of the shunt capacitance C. The resistance and the temperature of the environment are set to R = 2 Ω and T env = 4.2 K, respectively. Solid lines present the theoretical results for capacitance C = 10 and 0.3 pF. (c) Measured I − V curves of an NIS junction with R T = 761 k Ω on a ground plane providing a large protecting capacitance against thermal fluctuations (solid symbols) and of a similar junction with R T = 627 k Ω without the ground plane (open symbols). The dotted line is the corresponding theoretical line from the P ( E ) theory and R C environment with dissipation R at T env = 4.2 K. Linear leakage, i.e., nonvanishing subgap current due to coupling to the environment, can be observed. (b) Typical I − V characteristics, measured at 50 mK for a junction with R T = 30 k Ω. (a) Geometry of a NIS junction made of aluminum (low contrast) as the superconductor and copper (high contrast) as the normal metal. †On leave from Lebedev Physical Institute, Moscow 119991, Russia.įigure 9NIS junctions influenced by a hot environment.Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, New York 11794-3800, USA.NEC Smart Energy Research Laboratories and RIKEN Advanced Science Institute, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan and Department of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom.
Box 13500, FI-00076 AALTO, Finland and Low Temperature Laboratory (OVLL), Aalto University, P.O. QCD Labs, COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O.Centre for Metrology and Accreditation (MIKES), P.O.Box 13500, FI-00076 AALTO, Finland and Centre for Metrology and Accreditation (MIKES), P.O. Low Temperature Laboratory (OVLL), Aalto University, P.O.Finally, an account is given of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and applications and uses of single-electron devices outside the metrological context are briefly discussed. The important issues of readout of single-electron events and potential error correction schemes based on them are also discussed. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently “just” wild ideas, still often potentially competitive if technical constraints can be lifted. This review discusses the generic physical phenomena and technical constraints that influence single-electron charge transport and presents a broad variety of proposed realizations. Ever since, the production of an electrical current e f, or its integer multiple, at a drive frequency f has been a focus of research for metrological purposes. The control of electrons at the level of the elementary charge e was demonstrated experimentally already in the 1980s.
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